Samsung Electronics unveiled its CUBE strategy to expand next-generation memory capacity and bandwidth while improving heat management. The company said the approach will double the performance of eighth-generation high-bandwidth memory, or HBM5, compared with seventh-generation HBM4E, while reducing thermal resistance to 75% to 90% of existing HBM levels. Samsung is also targeting zHBM performance eight times higher than HBM5. The strategy uses a three-dimensional structure to improve capacity, utilization, bandwidth and efficiency, and the company plans its first prototype test of next-generation NAND flash product zNAND-O in 2028.