Samsung Electronics is positioning memory bandwidth as the central competitive advantage in the artificial intelligence era and expects its next-generation zHBM product to emerge after 2029, roughly one year earlier than market forecasts for commercialization around 2030. Cho Sang-yeon, executive vice president and head of Samsung Electronics' Device Solutions America (DSA), outlined the view on the 27th (local time) at The Six Five Summit 2026, an online U.S. information technology conference. He said AI infrastructure is moving from a compute-centric model to a memory-centric one because memory bandwidth determines tokens per second, user capacity, request volume, response speed, context preservation and throughput, as well as deployment cost. zHBM stacks high-bandwidth memory directly on top of an AI accelerator, reducing data travel and increasing bandwidth. Samsung is defining first-generation specifications, but must address thermal issues with technologies including hybrid copper bonding (HCB). Cho also emphasized advanced packaging and said Samsung's HBM4 approach uses an in-house 4-nanometer base die and end-to-end assembly and packaging. The company plans to bring Taylor Fab 2 in Texas online within a few years to expand advanced-node capacity, including 2-nanometer production, for U.S. customers.