High-bandwidth memory (HBM), a vertically stacked memory technology used in AI computing, is expected to take nearly 30% of DRAM chipmakers’ total wafer capacity next year, up from about 20% currently. Samsung Electronics Executive Vice President Kim Taewoo said HBM and standard DRAM use the same wafer capacity, so increasing HBM production could reduce supply available for conventional memory. The market is dominated by South Korea’s SK Hynix and Samsung Electronics, alongside U.S.-based Micron Technology.