Nanya Technology plans to invest NT$346.6 billion, or about $10.7 billion, from 2026 to 2029 in its new "Fab 5A" DRAM plant in Taiwan, marking the company’s largest-ever investment and the biggest single outlay in Taiwan’s DRAM industry in roughly two decades. The facility will use EUV lithography (extreme ultraviolet chipmaking tools) and 10nm-class process technology, with Nanya planning to roll out 1b, 1c, 1d and 1e nodes. Fab 5A is scheduled to start wafer production in the second half of 2027, reach 30,000 wafers a month in 2028 and 35,900 in 2029, with a long-term goal of 45,000. The expansion comes as Samsung Electronics, SK hynix and Micron focus on HBM (high-bandwidth memory for AI) and newer DRAM, tightening supply of legacy products such as DDR4 and DDR3. Nanya said stronger pricing and demand from industrial, server and PC markets helped July revenue jump 719.6% from a year earlier to a record NT$43.87 billion, while first-quarter revenue rose 60% sequentially to $1.55 billion. The company has raised this year’s capital expenditure budget by 34% to NT$69.7 billion for equipment down payments and research and development, and is seeking to lift DDR5 from about 10% of revenue while beginning customer qualification for LPDDR5 in the second half of this year. China’s CXMT is also expanding rapidly after raising up to CNY 66.6 billion in its recent initial public offering, with funds earmarked for wafer line upgrades and next-generation DRAM. Counterpoint Research said Samsung Electronics held a 39% global DRAM market share in the second quarter, ahead of SK hynix at 26% and Micron at 25%, while CXMT reached 7% after revenue growth of 716% year over year. TrendForce and industry watchers say HBM’s growing use of wafer capacity and the lag between fab construction and stable output could keep standard DRAM supply tight into 2027–2028 or later, increasing the influence of latecomers on global memory pricing and supply.