SanDisk said it has completed the design of its first High Bandwidth Flash die, a milestone that keeps the company on track to deliver product samples in 2027 as it pushes NAND-based memory for AI inference. The first generation is aimed at up to 512 GB per stack with read bandwidth of about 1.6 TB/s, and SanDisk's roadmap extends to 2 TB/s and then 3.2 TB/s, with 8-high and 16-high configurations spanning roughly 0.4 TB/s to 3 TB/s. SanDisk has said earlier simulations using eight 512 GB stacks per GPU delivered 12.8 TB/s of aggregate bandwidth and read performance within 2.2% of an unlimited-capacity High Bandwidth Memory setup in Meta's Llama 3.1 405B inference tests. The company is positioning the technology for AI inference rather than training, using its proprietary CBA and BiCS NAND processes to pursue much higher capacity than conventional HBM. SanDisk, now operating as an independent flash memory company after separating from Western Digital, formed a technical advisory board in July 2025 and signed a memorandum of understanding with SK hynix in August 2025 to help develop the specifications. The first open specifications are scheduled for August 2026, although earlier timeline references also described sampling in the second half of 2026.