Winbond Electronics is bringing forward expansion at its Luzhu plant in Kaohsiung as artificial intelligence drives long-term demand for memory and advanced packaging. The company will combine the originally planned phases two and three into a single Module B development, with cleanroom construction expected to begin in 2027 and equipment installation to start as early as the beginning of 2029. Equipment will be introduced in stages based on customer demand forecasts and long-term agreements, or LTAs, and customers are already negotiating for capacity in 2029 and 2030. Industry sources estimate that third-quarter prices for niche DRAM and SLC NAND, a type of flash memory, will rise about 50% from the previous quarter, while NOR Flash prices may increase about 30% as major cloud service providers build inventory. Memory price increases are expected to moderate to 2% to 5% in the fourth quarter, but higher DRAM capacity and shipment growth may still support quarter-on-quarter increases in revenue and profit. Winbond's second-quarter consolidated revenue reached NT$59.843 billion, while gross margin rose to 66.2% and after-tax earnings per share reached NT$5.40. Module B will cover Standard DRAM, CUBE DRAM, Wafer-on-Wafer and silicon capacitors, support 14-nanometer and future 12-nanometer DRAM processes, and eventually introduce EUV equipment.