Samsung Electronics has filed a trademark application for zHBF, signaling an early effort to establish a position in High Bandwidth Flash, an emerging NAND-based memory tier between HBM and SSDs. The company has not disclosed zHBF's structure or performance. Samsung's related zHBM concept stacks HBM directly on an AI accelerator to shorten data travel, increase bandwidth and reduce latency and power consumption. Executive Vice President Cho Sang-yeon said first-generation zHBM specifications are being defined and products are expected after 2029, about one year earlier than market forecasts for commercialization around 2030. He said AI infrastructure is shifting from compute-centric to memory-centric systems, with bandwidth affecting tokens per second, users, response speed, throughput and deployment cost. SK Hynix and SanDisk have released the first HBF specification, covering up to 512 gigabytes and approximately 0.4 to 3.0 terabytes per second by tier. Samsung may provide more zHBF details at Semicon Taiwan 2026, while thermal management, hybrid copper bonding and advanced packaging remain central development issues.