Navitas, GlobalFoundries to ship U.S.-made Gen 5 GaN in September

  • Navitas and GlobalFoundries will begin U.S. shipments of Gen 5 GaNFast power semiconductors.
  • 650 V devices will have RDS(ON) values from 11mΩ to 150mΩ.
  • Customer samples are scheduled before the end of 2026, following September wafers and October internal samples.

Navitas Semiconductor and GlobalFoundries will begin shipping U.S.-manufactured Gen 5 GaNFast gallium nitride power semiconductors in September, advancing a strategic partnership announced in November 2025. Navitas developed the Gen 5 GaNFast FETs and power integrated circuits for production on GlobalFoundries’ 200mm GaN-on-silicon platform in Burlington, Vermont. The initial family is expected to include 650 V devices with RDS(ON) values ranging from 11mΩ to 150mΩ. Wafers are scheduled to ship in September, internal samples in October and strategic customer samples before the end of 2026. The companies say the program will support AI infrastructure, high-performance computing, industrial electrification and critical national security applications while strengthening the U.S. semiconductor supply chain.

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