NAURA unveils 500:1 etching breakthrough for 3D DRAM without EUV
AI Summary- NAURA published an IEEE paper detailing two-step cyclic etching for 64-layer 3D DRAM.
- The process exceeded 500:1 SiGe-to-silicon selectivity and limited silicon loss to 1 nanometer.
- CXMT reached 10% global DRAM share in the second quarter of 2026.