Samsung Electronics will join an ASML-led consortium to co-develop 12-inch photomasks, seeking to strengthen next-generation DRAM and foundry production as chipmakers adopt High NA EUV lithography. The larger masks could eliminate the need to stitch together two 6-inch masks, improving scanner productivity, yield and cost efficiency. TSMC and Intel are pursuing separate collaborations with ASML; TSMC targets a 12-inch photomask pilot line by 2031, advanced-process lithography systems by 2033 and High NA EUV adoption from 2030. Samsung plans to apply High NA EUV to memory manufacturing on a 2028 mass-production line. Separately, Nota was selected to lead the humanoid sub-project in South Korea's 80 billion won K-On-Device AI Semiconductor Technology Development Program, developing software to optimize vision-language-action models for Mobilint's NPUs and local robot operation.