South Korean pure-play foundry DB HiTek has completed reliability qualification for its 1,200 V silicon carbide (SiC) MOSFET process on 8-inch wafers and established what it describes as the world's first complete 8-inch SiC foundry process flow. The platform covers design, manufacturing, electrical characterization and reliability qualification, with volume production targeted for 2027. DB HiTek is providing customers with first- and second-generation Process Design Kits (PDKs), while a third-generation PDK is scheduled for November. The second-generation process achieves specific on-resistance of 2.5 mΩ·cm² or less and a threshold voltage of 3 V or higher at an 18 V on-state gate voltage. The third-generation process is being qualified against a target of 2.3 mΩ·cm² or less and short-circuit withstand time of at least 2.5 microseconds. DB HiTek says the PDKs can shorten product development time by more than a year. Access is planned for longstanding customers in the third quarter of 2026 and all customers from the second quarter of 2027.