ASML is scaling its next-generation High-NA extreme ultraviolet lithography business as Intel, Samsung, SK Hynix and TSMC commit to production timelines. Ten systems are operating at four chipmakers, with three more being shipped or installed, while fleet availability reached 84% in July 2026 and is targeted to rise to 90% by the fourth quarter. ASML broke ground on Brainport Industries Campus North in Eindhoven, a planned 350,000-square-meter site whose first phase is due in 2029 and will combine production, logistics and offices. The company plans to use a new flow-factory model to increase output of machines priced at roughly $380 million to $400 million. Samsung and SK Hynix target High-NA EUV DRAM production in 2028, Intel is already using the technology on selected Panther Lake layers, and TSMC plans volume production from 2030. High-NA raises numerical aperture from 0.33 to 0.55 and can print features about 1.7 times smaller per exposure, but its halved exposure field can reduce throughput for large dies until a planned 12-inch photomask initiative addresses the stitching penalty.