Micron Technology demonstrated what it calls the industry’s first 512GB DDR5 registered dual in-line memory module (RDIMM), targeting artificial intelligence, in-memory databases, large-scale analytics and other memory-intensive workloads. The module uses vertically stacked DRAM dies connected by through-silicon vias and supports data-transfer speeds of up to 9,200 megatransfers per second. A dual-socket server with 24 memory slots could hold up to 12TB of DDR5 memory, four times the capacity possible with current 128GB modules in the same footprint. Micron said a single 512GB module consumes 16 watts, compared with 44.2 watts for four 128GB modules offering the same capacity, cutting operating power by more than 60%. Systems using the modules delivered up to 1.4 times the throughput of 256GB DDR5 configurations in Spark Support Vector Machine analytics. AMD and Intel are validating the RDIMM for next-generation server architectures, while Micron plans volume production in the second half of 2027, subject to customer demand. Enterprise deployment may not have a practical impact until 2028 or later, as data-center operators seek denser memory for increasingly large AI models and other memory-bound applications.