Chinese chipmaker ChangXin Memory Technologies is preparing to enter the NAND flash market with a research-and-development production line at a new Beijing factory. The move would expand CXMT beyond DRAM and bring it into competition with domestic rival Yangtze Memory Technologies, as well as Samsung Electronics, SK Hynix and Micron Technology. CXMT has founded a related Beijing research institute and is discussing potential NAND supply with startups developing storage for AI systems and supercomputers. AI-driven demand has tightened markets for DRAM, high-bandwidth memory and NAND flash, while global memory shortages could persist through late 2027. CXMT ranked fourth in global DRAM in the second quarter, with Counterpoint Research putting its share at 10%, up from 4% in the second quarter of 2025. Analysts say lower prices could help Chinese suppliers gain share despite performance gaps, putting pressure on South Korean manufacturers' profitability.