Solidigm, SK hynix’s U.S.-based subsidiary, is considering building a NAND flash memory factory in the United States, with upstate New York emerging as a leading candidate, three people familiar with the matter told Reuters. The project would be separate from discussions with Intel about producing memory at Intel’s Ohio facility. A U.S. plant could reduce Solidigm’s reliance on its sole NAND production facility in Dalian, China, while limiting exposure to potential U.S. tariffs and restrictions on exporting chipmaking equipment to China. No agreement has been reached, and key details remain under discussion. SK hynix said Solidigm is reviewing options to strengthen competitiveness, but no specific plans have been confirmed. The review comes as the Donald Trump administration presses for more domestic semiconductor production and AI data-center investment fuels a global memory-chip shortage. Solidigm’s preliminary U.S. review follows its focus on high-capacity enterprise solid-state drives and SK hynix’s separate U.S. investment in advanced packaging capacity in Indiana.