ChangXin Memory Technologies has begun mass production of its fifth-generation G5 DRAM platform and two 24Gb LPDDR5X products, advancing its effort to narrow the technology gap with global memory leaders. CXMT said self-aligned quadruple patterning reduced the memory-array active-area half-pitch to 11.95 nanometers, while gross die output per wafer increased by at least 50% from its fourth-generation platform. The company said the chips are used in flagship smartphones from Chinese brands including Xiaomi and Huawei. CXMT also reported a 45:1 array-capacitor aspect ratio and a 6,762-nanometer core cell-array height, citing process and material improvements. The company lacks access to extreme ultraviolet lithography equipment under U.S. restrictions, and industry insiders estimate it remains roughly three to five years behind Samsung Electronics and SK hynix when yields, cost competitiveness and process stability are considered.