Samsung Electronics is expected to at least double production of its HBM4 lineup next year, covering sixth-generation HBM4 and seventh-generation HBM4E. The company plans to increase outsourced cleaning of glass carriers, temporary wafer supports used during DRAM thinning, to 50,000 sheets a month from 20,000 this year and 10,000 last year. The rise in carrier volume points to at least a doubling in HBM4 and HBM4E output, even after accounting for reuse, process differences and yield. Samsung began mass-production shipments of HBM4 in February, using sixth-generation 10-nanometer-class 1c DRAM and a 4-nanometer base die, and supplied 12-layer HBM4E samples to customers including Nvidia in May. Industry officials estimate total HBM production will increase nearly 40% to about 250,000 wafers a month next year from roughly 180,000 this year. HBM4 products are expected to account for about 80% of shipments next year, up from around 40% this year as HBM4E mass production becomes fully operational. An industry official said Samsung appears to be making high-margin HBM4 the focus of its output expansion.