Chinese DRAM maker ChangXin Memory Technologies plans to invest 34.9 billion yuan, approximately $5.2 billion or 7.07 trillion Korean won, in research and development and the second phase of a back-end testing base. The company will allocate 18 billion yuan from approximately 36.8 billion yuan in excess initial public offering proceeds—13 billion yuan for R&D and 5 billion yuan for testing—while the plan still requires shareholder approval. The R&D project has a total budget of 24.1 billion yuan and will be built at CXMT’s existing 12-inch memory wafer manufacturing base in Hefei, while the 10.8 billion yuan testing project will support DRAM inspection and module assembly. The investments are intended to expand CXMT’s integrated device manufacturer model and reduce potential back-end capacity bottlenecks. CXMT’s first-half R&D spending rose 87.4% year on year to 6.8595 billion yuan, and TrendForce data showed its global DRAM sales share reached 9.5% in the second quarter, ranking fourth.