Navitas Semiconductor (Nasdaq: NVTS) has been selected by the U.S. Army for the ALATTIS initiative to develop and validate a domestic manufacturing process for 10 kV silicon carbide insulated-gate bipolar transistors, or IGBTs, and related PiN diodes. Sponsored by the Army Research Laboratory, the prototype effort is aimed at high-power defense and infrastructure systems and expands Navitas' work beyond its existing silicon carbide MOSFET portfolio. The company plans to combine its trench-assisted planar architecture with advanced diode technology through design, fabrication and testing cycles intended to demonstrate device performance, reliability and manufacturing readiness. Navitas shares traded at $11.88 Tuesday, up $0.15 from Monday's $11.73 close, following earlier reports of a sharper market reaction to the award.