Samsung Electronics will use Taiwan Semiconductor Manufacturing Company’s 3-nanometer process to produce base dies for Nvidia’s custom NVHBM high-bandwidth memory, reportedly marking Samsung’s first collaboration with TSMC at the HBM manufacturing stage. Nvidia has asked Samsung, SK Hynix and Micron Technology to make NVHBM base dies on TSMC’s 3-nanometer process and standardize core dies on sixth-generation 1c DRAM technology. Introduced in August, NVHBM places Nvidia’s memory controller in the base die and is designed to provide up to 30% more bandwidth and 15% lower power consumption than standard HBM4E. Samsung will maintain its turnkey model for standard HBM and custom products supplied to other customers. JPMorgan projects HBM shortages of 20% in 2026, 19% in 2027 and 16% in 2028, while ChangXin Memory Technologies plans server-memory products using a denser DRAM design by the end of 2026.