
The chipmaker’s broader domestic push includes a roughly $200 billion commitment for manufacturing and R&D across Idaho, New York and Virginia, backed by CHIPS Act support and aimed at producing 40% of its DRAM in the United States.
Micron Technology said it now plans to invest more than $250 billion in U.S. fabs and technology through 2035, citing AI-driven memory demand and a goal of producing 40% of its DRAM in the United States. As part of that broader push, Micron has outlined a roughly $200 billion commitment spanning $150 billion for domestic manufacturing and $50 billion for research and development across Idaho, New York and Virginia, a $30 billion increase from prior pledges. The company plans a second leading-edge memory fab in Boise, Idaho, with DRAM output targeted for 2027, up to four high-volume fabs in New York, and a modernization of its Manassas, Virginia, operations. Micron has secured up to $6.4 billion in CHIPS Act support, including finalized awards of $275 million for Virginia, and said its U.S. projects are expected to create more than 90,000 jobs overall. The expansion comes as Micron marked its first concrete pour at its Clay, New York site more than one quarter ahead of schedule and separately said it plans to invest up to $3 billion to strengthen the domestic semiconductor supply chain supporting its U.S. manufacturing footprint.