SK Hynix starts Y1 fab equipment закупки, targets 20,000 wafers a month by 2027

The first-phase startup at the Yongin semiconductor cluster was reportedly pulled forward to February 2027, ahead of pilot-line construction and spring equipment installation for AI memory products.

Summary

SK Hynix has begun procuring advanced DRAM manufacturing equipment for the first phase of wafer fab Y1 in Yongin, South Korea, with preliminary planned capacity of about 20,000 wafers per month for sixth-generation 10nm-class 1c DRAM. The startup for Y1 Ph1 was moved to next February from next May, with pilot-line construction due to begin in February and equipment installation at scale planned for March-April. The fab is being prepared to make AI server DDR, LPDDR and next-generation HBM4E, highlighting SK Hynix’s effort to expand advanced memory output for artificial intelligence workloads.

Terms & Concepts
  • 1c DRAM: A sixth-generation 10nm-class DRAM process node used for advanced memory chips.
  • LPDDR: Low-power DRAM designed for energy-efficient devices and systems.
  • HBM4E: A next-generation high-bandwidth memory product aimed at data-intensive computing uses.